High aspect ratio capacitively coupled MEMS devices

ABSTRACT

A method that includes forming an opening between at least one first electrode and a second electrode by forming a recess in a first electrode layer, the recess having sidewalls that correspond to a surface of the at least one first electrode, forming a first sacrificial layer on the sidewalls of the recess, the first sacrificial layer having a first width that corresponds to a second width of the opening, forming a second electrode layer in the recess that corresponds to the second electrode, and removing the first sacrificial layer to form the opening between the second electrode and the at least one first electrode.

BACKGROUND

1. Technical Field

The present disclosure relates generally to micro electro-mechanicalsystems, and more particularly to forming at least one suspendedelectrode and a second electrode separated by a submicron opening.

2. Description of the Related Art

Micro electro-mechanical systems (MEMS) in semiconductors have arisenfor various applications such as to sense temperature, pressure, strain,acceleration, rotation, and chemical properties of liquids and gases.Those MEMS structures are usually combined with other integratedcircuits, such as complimentary metal oxide semiconductor (CMOS)circuits, for analyzing and calculating the parameters sensed by MEMS.Therefore, the MEMS manufacturing processes are required to becompatible with the existing MOS or CMOS manufacturing processes suchthat the whole system is inexpensive, reliable, and compact.

Various MEMS structures and materials have been proposed and developedfor such sensing purposes. Sensing may be accomplished by capacitivelycoupled electrodes separated by an air gap. As one or both of theelectrodes move relative to the other electrode a fluctuation in thecapacitive air gap results in a change in the capacitance. Thesensitivity of capacitively coupled electrodes increases as a distancebetween the electrodes is reduced. Device performance may also beimproved by maximizing a ratio of a surface area of the electrodes tothe distance between two electrodes.

Alternatively, the sensitivity of the capacitively coupled electrodesmay be varied by changing dimensions and area of the material used toform the electrodes. This is accomplished by changing the surface area,the width, the length, or the height of the MEMS structure to modify thedevice performance.

Currently inertial sensors and other capacitively coupled electrodes aretypically silicon based, such as polysilicon, bulk silicon, orepitaxially grown silicon.

BRIEF SUMMARY

A high aspect ratio MEMS device with very small spaces between adjacentstructures having precise distances with tight tolerances is provided inone inventive embodiment. MEMS structures are relatively tall, usuallyin the range of 20 microns. The space between them can be formed on theorder of 10 nanometers or less, or a ratio of over 1000 to 1 for theheight to distance.

According to one of the methods of the present invention, one member ofa MEMS structure, such as the anchor, is first formed. An aperture isthen etched in the MEMS structure providing a through hole to a baselayer. Sidewalls are then grown to a precise thickness on the MEMSstructure. The thickness of the sidewalls can be exactly controlledwithin tight tolerances using standard oxide growth on silicon, which isa well-known process. The oxide is formed by an acceptable method,either growth or deposition, with growth being preferred because it canbe precisely controlled using known processes. When the oxide has grownto a desired thickness, an electrode layer is formed in the aperture,either by deposition, epitaxial growth, or pseudo-epitaxial growth.

The sidewall oxide, together with other oxides, is then etched away as asacrificial oxide to release the formed silicon layer in the aperturethat forms the resonator. Accordingly, the distance between theresonator and the electrode can be precisely controlled to a very smalldistance with tight tolerances.

The present disclosure describes a method that includes forming anopening between at least one first electrode and a second electrode, theforming including forming a recess in a first electrode layer, therecess having sidewalls that correspond to a surface of the at least onefirst electrode; forming a first sacrificial layer on the sidewalls ofthe recess, the first sacrificial layer having a first width thatcorresponds to a second width of the opening; forming a second electrodelayer in the recess that corresponds to the second electrode; andremoving the first sacrificial layer to form the opening between thesecond electrode and the at least one first electrode.

By incorporating other materials into the electrodes, devices havingdifferent flexibility, hardness and strength from silicon, the springconstant can change without requiring a change in the physical size orshape. For example, germanium is elastic and can change the flexibilityof a sensing body without varying the physical structure. Moreparticularly, silicon germanium may be used to affect the Young'sModulus of the electrode and can, therefore, affect the sensitivity ofthe electrode without increasing the area or decreasing the distance.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The foregoing and other features and advantages of the presentdisclosure will be more readily appreciated as the same become betterunderstood from the following detailed description when taken inconjunction with the accompanying drawings.

FIGS. 1-10 are cross-sectional views of different stages of amanufacturing process of forming a first electrode and a secondelectrode separated by an opening;

FIGS. 11-17 are cross-sectional views of different stages of analternative manufacturing process of forming a first and secondsuspended electrode separated from a T-shaped electrode by an opening;and

FIGS. 18-28 are cross-sectional views of different stages of yet anotheralternative manufacturing process of forming a first suspended electrodeand a second electrode separated by an opening.

DETAILED DESCRIPTION

In the following description, certain specific details are set forth inorder to provide a thorough understanding of various embodiments of thedisclosure. However, one skilled in the art will understand that thedisclosure may be practiced without these specific details. In otherinstances, well-known structures associated with MEMS components andsemiconductor fabrication have not been described in detail to avoidunnecessarily obscuring the descriptions of the embodiments of thepresent disclosure.

Unless the context requires otherwise, throughout the specification andclaims that follow, the word “comprise” and variations thereof, such as“comprises” and “comprising,” are to be construed in an open, inclusivesense, that is, as “including, but not limited to.”

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure or characteristicdescribed in connection with the embodiment is included in at least oneembodiment. Thus, the appearances of the phrases “in one embodiment” or“in an embodiment” in various places throughout this specification arenot necessarily all referring to the same embodiment. Furthermore, theparticular features, structures, or characteristics may be combined inany suitable manner in one or more embodiments.

As used in this specification and the appended claims, the singularforms “a,” “an,” and “the” include plural referents unless the contentclearly dictates otherwise. It should also be noted that the term “or”is generally employed in its sense including “and/or” unless the contentclearly dictates otherwise.

As used in the specification and appended claims, the use of“correspond,” “corresponds,” and “corresponding” is intended to describea ratio of or a similarity between referenced objects. The use of“correspond” or one of its forms should not be construed to mean theexact shape or size.

In the drawings, identical reference numbers identify similar elementsor acts. The size and relative positions of elements in the drawings arenot necessarily drawn to scale.

FIGS. 1-10 illustrate a manufacturing process for forming a high aspectratio capacitively coupled MEMS device having a first suspendedelectrode 154 separated from a second movable electrode 146 by anopening 158 (see FIG. 10). The width of the opening 158 can be preciselycontrolled on the order of tens of nanometers. Further, the width can beany selected value in the range of 10 to 200 nanometers with a rangebetween 20 and 100 nanometers being preferred, 50 nanometers beingcommon. The reduced width of the opening 158 can result in the abilityto decrease in the application voltage of the MEMS device, which makesthe device compatible with sub-100 nanometer CMOS technology nodes. Amethod of making the device will now be described.

FIG. 1 illustrates a substrate 102 that may be formed of monocrystallinesemiconductor material such as silicon. The substrate 102 may be dopedwith a desired conductivity type, either P-type or N-type. A firstsacrificial layer 104 is deposited or grown on the substrate 102. Thefirst sacrificial layer 104 may be a thermal oxide, such as silicondioxide, tetra ethyl ortho silicate (TEOS), borophosphosilicate glass(BPSG), spin-on glass, poly germanium or any suitable sacrificial layerthat is removable later in the process. A plasma etch chemical vapordeposition (PECVD) technique may be used to deposit the firstsacrificial layer 104. In one embodiment, the first sacrificial layer104 has a thickness in the range of one to two microns.

Subsequently, a first electrode layer 106 is deposited conformally overthe first sacrificial layer 104. The first electrode layer 106 may havea thickness of 20 microns or more depending on the device features. Thethickness of the first electrode layer 106 corresponds to a desiredheight of the suspended electrode 154 in FIG. 10. The height alsodetermines a surface area of the suspended electrode 154 that iscapacitively coupled to the second electrode 146 in FIG. 10. The ratioof the surface area to the width of the opening 158 between the twoelectrodes also affects the capacitive coupling of the electrodes, theequation for a capacitor being well known:

${C = {k\;\frac{A}{d}}},$wherein A is the area of the plates and d is the distance between them,and k is a constant that includes the dielectric constant of thematerial between the plates.

Capacitively coupled electrodes may be utilized in a variety ofapplications, such as accelerometers, temperature and pressure sensors,and gyroscopes. For example, the suspended electrode 154 may beconfigured to deflect in response to an acceleration force. The secondelectrode 146 detects a change in the capacitance between the twoelectrodes and through appropriate circuitry can signal the detectedacceleration force.

More particularly, the suspended electrode 154 may be manufactured torespond, i.e., deflect, when it experiences a predetermined accelerationforce. This may be achieved by selecting a particular size for thesuspended electrode 154 and by utilizing a specific material. Silicongermanium is a material that (SiGe) can be deposited in a variety ofatomic percentages that can be carefully controlled to produce differentmechanical properties. SiGe has excellent crystalline structure and iscompatible with current semiconductor etchants.

The first electrode layer 106, portions of which will correspond to thesuspended electrode 154, may be formed of SiGe of a first relativeatomic percentage. An epitaxial film SiGe may be deposited usingchemical vapor deposition (CVD). The crystalline structure of theunderlying material onto which the SiGe forms determines the crystallinestructure of the SiGe. For example, when deposited on a non-crystallinematerial the SiGe will form as a polycrystalline structure.

A reaction between silane (SiH4), germane (GeH4), and a reducing gas,such as hydrogen, may create the first electrode layer 106 of SiGe. Aflow rate of the reducing gas determines the atomic percentage ofsilicon to germanium. The relative atomic percentage of SiGe affects theYoung's Modulus, i.e., the stiffness of the suspended electrode 154,which in turn affects the sensitivity of the capacitively coupledelectrode.

Varying the atomic percentage of silicon to germanium creates differentmechanical properties in the resulting structure. Since germanium ismore elastic than silicon, incorporating some percentage of germaniumwith silicon for the electrodes will change the flexibility of thedevice without having to change the mechanical or physical structure ofthe electrode. If the resulting structure is a resonant structure,particular spring constants may be achieved by selecting the atomicpercentage of the silicon to germanium. By using SiGe, resonating MEMSdevices of similar size may be produced that have different resonantfrequencies and varying sensitivity.

Advantageously, layers of SiGe form at lower temperatures thanpolysilicon or bulk silicon. Therefore, when forming a MEMS device withintegrated circuits, the electrodes, i.e., sensing bodies, may be formedafter formation of the integrated circuits. The lower formationtemperatures of SiGe make it is easier to form MEMS devices withintegrated circuits by avoiding problems such as delamination.

A second sacrificial layer 108 is deposited overlying the firstelectrode layer 106. The second sacrificial layer 108 may be formed ofthe same material as the first sacrificial layer or may be analternative material that is removable later in the process. Inaddition, the second sacrificial layer 108 may be deposited at a similarthickness to the first sacrificial layer 104, for example in the rangeof 1 to 2 microns.

A photoresist layer 110 is deposited and patterned to form an opening112 that exposes a top surface 114 of the second sacrificial layer 108.As shown in FIG. 2, the opening 112 defines contours of a recess 116formed through the second sacrificial layer 108 and the first electrodelayer 106. The second sacrificial layer 108 acts as a hard mask as thefirst electrode layer 106 is etched. The recess 116 exposes a topsurface 118 of the first sacrificial layer 104 and has walls 120, 121defined by the first electrode layer 106. In one embodiment, a ratiobetween the thickness of the first electrode layer 106 and a width ofthe recess 116 is 5:1. In other embodiments, the ratio is 10:1, FIG. 2not being shown to an exact scale. After forming the recess 116, thephotoresist layer 110 is removed.

FIG. 3 shows a formation of a third sacrificial layer 122 adjacent thewalls 120, 121 of the first electrode layer 106. Two portions of layer122 are formed on the sidewalls, labelled 122 a and 122 b. A thicknessof the third sacrificial layer 122 may be controlled to optimizeperformance of the final MEMS device. The thickness of the layer 122will determine the width of the opening 156 between the first suspendedelectrode 154 and the second electrode 146. For example, the width maybe in the range of 10 to 100 nanometers. In one embodiment, a ratio ofthe thickness of the first electrode layer 106 to the width of the thirdsacrificial layer 122 is 400:1, i.e., 20 microns:50 nanometers.

The third sacrificial layer 122 may be grown or deposited. In FIG. 3,the third sacrificial layer 122 is illustrated as consuming portions ofthe exposed walls 120, 121 of the first electrode layer 106 as it isgrown. Growing is preferred if the layer is a silicon dioxide since thethickness can be precisely controlled and will be uniform along theentire wall. Although surfaces of the third sacrificial layer 122 areillustrated as in line with the boundaries of opening 112 in the secondsacrificial layer 108, some of the third sacrificial layer 122 mayextend into the recess. However, the width of the sacrificial layer 122does not significantly affect the width of the recess 116.Alternatively, FIG. 20 illustrates the third sacrificial layer asconformally deposited.

If the third sacrificial layer 122 is a grown oxide, the first andsecond sacrificial layers 104 and 108 may incidentally grow. Generally,exposed surfaces of oxides will grow along the interface of thesacrificial layer and an adjacent layer. For example, when growing thethird sacrificial layer 122 the first sacrificial layer 304 will growalong the interface with the substrate 302. The thickness of the grownlayers may be selected to achieve the desired purpose and any incidentalgrowth may be accounted for prior to growing the sacrificial layers.

In FIG. 4, a second electrode layer 124 is deposited in the recess 116and overlies the top surface 114 of the second sacrificial layer 108.The second electrode layer 124 may be formed of the same material or adifferent material as the first electrode layer 106. In the embodimentwhere the first electrode layer 106 is SiGe, the second electrode layer124 may also be SiGe. The atomic percentage of silicon to germanium ofthe second electrode 124 may be the same or different from the atomicpercentage of the first electrode 106. In addition, the atomicpercentage of the second electrode 124 may vary through the depositedSiGe. For example, the second electrode layer 124 may have a firstatomic percentage adjacent the top surface 118 of the first sacrificiallayer 104 and have a second atomic percentage adjacent the top surface114 of the second sacrificial layer 108.

In the formula Si_(1-x) Ge_(x), the value of x can be varied fordifferent layers and for different parts of each layer. Ge has a Young'smodulus of elasticity that is lower than that of silicon, on the rangeof 30% to 50% lower, depending on the plane orientation. Accordingly, asthe ratio of Ge to Si is varied, the flexibility and thus theresponsiveness of the resonator varies. In some embodiments, a ratio of15% Ge to 85% Si is desired. In other embodiments, percentages of Ge mayrange from 20% to 50%, with a ratio of about 20% being preferred in someembodiments.

In FIG. 5, the second electrode layer 124 is subsequently planarized bychemical mechanical planarization (CMP) to reexpose the top surface 114of the second sacrificial layer 108. The CMP forms a top surface 126 ofthe second electrode layer 124 that is in the same plane as the topsurface 114 of the second sacrificial layer 108.

Subsequently as shown in FIG. 6, a second photoresist layer 128 isdeposited and patterned over the second sacrificial layer 108. Thepattern of the photoresist layer 128 corresponds to selected portions ofthe second sacrificial layer 108 that will remain after removal of theportions of the second sacrificial layer 108 that are exposed. Thepattern corresponds to a width of the first suspended electrode 154 andanchor portion 150. The pattern may be varied to meet designrequirements of the MEMS device. Alternative photoresist patterns areshown in FIGS. 15 and 23.

As shown in FIG. 7, a first portion 130, a second portion 132, and athird portion 134 of the second sacrificial layer 108 correspond to thepattern of the photoresist layer 128. These portions 130, 132, and 134remain after the exposed portions the second sacrificial layer 108 areremoved by a suitable etch technique. The first portion 130, the secondportion 132, and the third portion 134 correspond to boundaries of thefirst suspended electrode 154, the second electrode 156, and the anchorportion 150, respectively. The photoresist layer 128 is removed afteretching the second sacrificial layer 108.

A top surface 136 of the first electrode layer 106 is exposed byremoving the exposed portions of the second sacrificial layer 108. Ifthe second sacrificial layer 108 is silicon dioxide, TEOS, or BPSG, forexample a hydrogen fluoride etch may be used to remove the portions. Ifpolygermanium is used as the sacrificial layer, H₂O₂ is a suitablerelease etchant.

In FIG. 8, a third electrode layer 138 is deposited overlying theexposed top surface 136 of the first electrode layer 106 and the firstportion 130, second portion 132, and third portion 134 of the secondsacrificial layer 108. The third electrode layer 138 may also be formedof SiGe. Based on the desired device functionality, the manufacturer ordesigner may select different atomic SiGe percentages for firstelectrode layer 106, the second electrode layer 124, and the thirdelectrode layer 138. Alternatively, two or more of the electrode layersmay be of the same atomic percentage. As mentioned above, the atomicpercentage of silicon to germanium may be varied within each individualelectrode layer. The layer 138 will bond tightly with layer 106 to forma single conductive and mechanical member.

In FIG. 8 a third photoresist layer 140 is deposited and patternedoverlying the third electrode layer 138. A pattern of the thirdphotoresist layer 140 corresponds to a width of the second electrode 146and the anchor portion 150. As stated above, the pattern may be variedto achieve a desired final device arrangement and size.

In FIG. 9, portions of the first electrode layer 106, the secondelectrode layer 124, and the third electrode layer 138 are removed. Theremoval of the portions of the electrode layers re-exposes the topsurface 118 of the first sacrificial layer 104. Boundaries of theremaining portions of the three electrode layers 106, 124, and 138correspond to the pattern of the third photoresist layer 140 and thefirst portion 130, the second portion 132, and the third portion 134 ofthe second sacrificial layer 108.

An exterior boundary of the first portion 130 of the second sacrificiallayer 108, shown as the leftmost edge, corresponds to an exteriorsurface 152 of the first suspended electrode 154. The first electrode154 is further bounded by the first sacrificial layer 104 along a bottomsurface and a first portion 122 of the third sacrificial layer along aninterior surface.

An exterior boundary of the third photoresist layer 140, shown as theleftmost edge, corresponds to a first exterior surface 144 of the secondelectrode 146. Another boundary of the third photoresist layer 140,shown as the rightmost edge, corresponds to a second exterior surface148 of the second electrode 146. As mentioned above, the dimensions ofthe third photoresist layer 140 may be varied to achieve specificdimensions of the final electrodes, see FIGS. 26 and 27 for examples ofvariations in shape and size.

The first portion 130 of the second sacrificial layer 108 corresponds tothe width of the suspended electrode 154. The second portion 132 of thesecond sacrificial layer 108 corresponds to a second portion 122 b ofthe third sacrificial layer that is located between the second electrodelayer 124 and a portion of the first electrode layer 106 that remains.The size of the second portion 132 of the second sacrificial layer 108may be varied to completely separate the third electrode layer 138 fromthe first electrode layer 106, as accomplished by the first portion 130.FIGS. 16 and 17 also illustrate an alternative embodiment where thesecond portion 132 is larger. Other positions and arrangements of thesecond sacrificial layer 108 may be used to achieve specific deviceparameters.

The second electrode 146 has the first exterior surface 144 that extendsover a part of the suspended electrode 154. The second exterior surface148 is a combination of electrode layers, i.e., the first electrodelayer 106 followed by the third electrode layer 138. The second exteriorsurface 148 is separated from the anchor portion 150 by a selecteddistance that may be varied based on the desired device parameters. Inan alternative embodiment, the anchor portion 150 may not be visible inthe cross section as illustrated.

Optionally, after removing the photoresist layer 140 the exposedsurfaces of the first electrode layer 106 and the third electrode layer138 may be oxidized. For example, an oxide layer may be deposited on allexposed surfaces of the first electrode 106 and the third electrode 138.The oxide may be deposited 5000 Angstroms thick. The oxide can be usedto clean up surface defects of the silicon germanium surfaces.

In FIG. 10, portions the first sacrificial layer 104, the first portion130 and the second portion 132 of the second sacrificial layer 108, andthe third sacrificial layer 122 are removed with a suitable etchtechnique. The removal of the first sacrificial layer 104 creates afirst opening 156 that separates the first suspended electrode 154 fromthe substrate 102. The first suspended electrode 154 is rigidly attachedto the substrate 102 at a location that is not visible in thiscross-section. The first suspended electrode 154 may be electricallycoupled to the anchor portion 150 at the location where it is rigidlyattached to the substrate 102. Alternatively, the first suspendedelectrode 154 may be rigidly attached to the substrate at a firstlocation and a second location so that a portion of the suspendedelectrode 154 between to first and second locations is moveable.

The removal of the first portion 122 a of the third sacrificial layerseparates the first electrode 154 from the second electrode 146 in ahorizontal direction by a second opening 158. The second portion 122 bof the third sacrificial layer also corresponds to a third opening 160between the second electrode layer 124 and the third electrode layer138. The second opening 158 and the third opening 160 correspond to thewidth of the third sacrificial layer 122, which may be in the range of10 to 100 nanometers. The high aspect ratio of these electrodes inconjunction with the minimal width of the opening 156 between theseelectrodes produces highly sensitive devices with significant design andprocessing flexibility.

The second electrode 146 is the combination of a portion of the firstelectrode layer 106, the second electrode layer 124, and the thirdelectrode layer 138. These electrode layers may merge if the same atomicpercentage is used in each deposition. The second electrode 146 isillustrated as suspended and is rigidly attached to the substrate 102 ata location not shown in this cross-section. In an alternativeembodiment, the second electrode 146 may be attached to the substrate102 along an entire bottom surface of the second electrode 146 (notshown). This may be achieved by additional pattern and etch stepsearlier in the process so that the second electrode layer 124 is incontact with substrate instead of the first sacrificial layer 104.

The second electrode 146 forms an overhang 164 separated from the firstelectrode 154 in a vertical direction by a fourth opening 166 thatcorresponds to the first portion 130 of the second sacrificial layer108. The fourth opening 166 connects to the second opening 158 so thattwo surfaces of the first electrode 154 may capacitively interact withtwo surfaces of the second electrode 146. The increased surface areacreated by the overhang 164 can increase the sensitivity of thecapacitively coupled electrodes, the suspended electrode 154 and thesecond electrode 146.

The anchor portion 150 may be electrically coupled to the firstsuspended electrode 154 or the second electrode 146 or to a thirdvoltage potential. Other anchor portions maybe formed in the process sothe electrodes are electrically connected to different anchors. Beneaththe anchor portion 150, a portion 142 of the first sacrificial layer 104remains to connect the anchor to the base. The anchor portion 150 issignificantly larger than illustrated and the etch that removes thefirst sacrificial layer 104 is not long enough to remove all of thefirst sacrificial layer 104 that is under the anchor portion 150.

The suspended electrode 154 may be designed to respond to anacceleration force. When the predetermined acceleration force is appliedto the MEMS device, the suspended electrode will deflect to electricallycontact the second electrode 146. Alternatively, it can be driven by anoscillator or used in other MEMs type circuits. The change in distancebetween the electrodes will be sensed and may be transmitted throughappropriate circuitry.

The properties of the MEMS device may be controlled during the designprocess to optimize device features. For example, the width and lengthof the suspended electrode 154 may be varied along with the width of theopening 158 between the two electrodes. Additionally, the weight andflexibility of the suspended electrode 154 may be selected to controlthe response of the device. The deflection distance of the suspendedelectrode 154 can be reasonably predicted based on the size parametersand material composition.

In an alternative embodiment, the suspended electrode 154 may bedesigned to respond to changes in temperature. Selection of materialswith different thermal expansion coefficients for the suspendedelectrode and the second electrode can be configured to detecttemperature variations. The close distances that can be achieved by thisinvention, on the range of 10 microns, permit uses of MEMs devices thatwere contemplated in the prior art.

By minimizing the width of the opening 158 between the first suspendedelectrode 154 and the second electrode 146 and maximizing the height towidth ratio, the performance of the capacitively coupled electrodesimproves. In addition, using SiGe for the electrodes allows variation ofthe Young's Modulus, i.e., the spring constant of the suspendedelectrode 154, without having to alter the physical size of the device.

FIGS. 11-17 illustrate an alternate process sequence to form a T-shapedelectrode 232 that is capacitively coupled to a first and secondsuspended electrode 234 and 236, respectively (see FIG. 17). Twoopenings 252, 253 separate the T-shaped electrode 232 from the first andsecond suspended electrodes 234, 236.

This alternate process begins with the same processes described abovewith respect to FIGS. 1-4. FIG. 11 shows a first sacrificial layer 204deposited or grown on a substrate 202 and a first electrode layer 206 isdeposited overlying the first sacrificial layer 204. The first electrodelayer may be 20 microns or more in depth.

Subsequently, a second sacrificial layer 208 is grown or depositedoverlying the first electrode layer 206. A first photoresist layer 210is patterned and etched to define an opening 212 that exposes a portionof the top surface 214 of the second sacrificial layer 208. The opening212 is wider than the opening 112 shown in FIG. 1. The increased widthof opening 212 corresponds to a wider base (i.e., a lower portion 256)of the T-shaped electrode 232.

The second sacrificial layer 208 is etched corresponding to the width ofthe opening 212 and acts as a hard mask to form a recess 216, in FIG.12. The recess 216 forms through the second sacrificial layer 208 andthe first electrode layer 206 to expose a top surface 218 of the firstsacrificial layer 204. In an alternative embodiment, the recess 216 mayexpose a top surface of the substrate 202 so that the T-shaped electrode232 is rigidly attached to the substrate 202 along an entire bottomsurface of the T-shaped electrode 232.

The recess 216 has a first wall 220 and a second wall 221 on opposingsides of the recess 216. The first and second wall 220, 221 are formedof exposed surfaces of the first electrode layer 206. A width of therecess 216 may be varied to meet specific design needs.

As with the process described in FIGS. 1-10, FIG. 13 shows a thirdsacrificial layer 222, 223 grown on the first and second walls 220, 221of the first electrode layer 206. As described above, the thirdsacrificial layer 222 may be formed of the same material as the firstand second sacrificial layers 204, 208, or of a different type ofmaterial that can be removed at a later stage of the process.

In FIG. 14, a second electrode layer 224 is deposited overlying the topsurface 214 of the second sacrificial layer 208 and in the recess 216.As described above, the first and second electrode layers 206 and 224may be formed of SiGe. The first and second electrode layers 206 and 224may be of SiGe of the same atomic percentage or of a different atomicpercentage.

In FIG. 15, a second photoresist layer 226 that is patterned to form thestructure of the T-shaped electrode 232 and an anchor portion 250 to beformed later in the process. The anchor portion 250 is simply forillustrative purposes and may not be visible in this cross-section. Theanchor portion 250 is illustrative that other features that electricallyconnect to the T-shaped electrode 232 and the suspended electrodes 234,236 may be formed simultaneously with the electrodes.

A top surface 230 of the second electrode layer 224 is exposed by thephotoresist layer 226 and corresponds to portions of the layers thatwill be removed. Additionally, the second photoresist layer 226corresponds to exterior surfaces of the T-shaped electrode 232 and thefirst and second suspended electrodes 234, 236. The second photoresistlayer 226 protects the layers beneath it as the exterior surfaces of theT-shaped electrode 232 and the first and second suspended electrodes234, 236 are formed.

FIG. 16 shows electrode features that remain after portions of thesecond electrode layer 224, the second sacrificial layer 208, and thefirst electrode layer 206 are removed. The removal of the three layersre-exposes portions of the top surface 218 of the first sacrificiallayer 204. After removing the second photoresist layer 226, a topsurface 238 of the T-shaped electrode 232 that corresponds to the topsurface 230 of the second electrode layer 224 is exposed. Upper exteriorsurfaces 240 of the T-shaped electrode 232 correspond to boundaries ofthe second photoresist layer 226. An exterior surface 242 of the firstsuspended electrode 234 and an exterior surface 244 of the secondsuspended electrode 244 also form when the upper surfaces 240 of theT-shaped electrode 232 form.

As described above, the first electrode layer 206 and the secondelectrode layer 224 may be formed of the same or of different materials.In one embodiment, the first and second electrode layers 206, 224 areboth silicon germanium of the same atomic percentage. However, the firstelectrode layer 206 may be a silicon germanium deposition of a differentatomic percentage than the second electrode layer 224. The atomicpercentage of the silicon germanium deposition may also vary within theindividual layers. The specific atomic percentages may be selected tooptimize the Young's Modulus of the electrodes.

FIG. 17 shows the released T-shaped electrode 232 and the first andsecond suspended electrodes 234, 236. An etch technique removes portionsof the first sacrificial layer 204 and the remaining portions of thesecond and third sacrificial layers 208, 222. In one embodiment, thesacrificial layers may be removed in different processes depending onthe type of material used for the different layers. In anotherembodiment, periodic openings formed through the top surface 238 of theT-shaped electrode may align with and aid in the removal of thevertically arranged third sacrificial layer 222.

Removal of the first sacrificial layer 204 forms an opening 246 thatseparates the first and second suspended electrodes 234, 236 and thelower portion 256 of the T-shaped electrode 232 from the substrate 202.Removal of the second sacrificial layer 208 forms upper overhangs 258,260 of the T-shaped electrode 232 that extend from the lower portion 256over the first and second suspended electrodes 234, 236. An opening 248separates the first suspended electrode 234 from the upper overhang 260and another opening 254 separates the second suspended electrode 236from the other upper overhang 258. A width of the openings 248, 254correspond to the second sacrificial layer 208 and may be varieddepending on design needs.

The first and second suspended electrodes 234, 236 are also separatedfrom the T-shaped electrode in a horizontal direction by openings 252,253, respectively. The openings 252, 253 correspond to the width of thethird sacrificial layer 222, 223.

Having two surfaces of each of the first and second suspended electrodes234, 236 capacitively coupled to the T-shaped electrode 232, i.e., theoverhangs 258, 260, increases the amount of change in capacitance thatcan be registered and measured.

The anchor portion 250 remains attached to the substrate 202 by aportion 262 of the first sacrificial layer 204 that remains afterremoving the other portions. The first and second electrode may beelectrically coupled and rigidly connected to the anchor portion 250 ata location not visible in this cross-section. In addition, the T-shapedelectrode 232 maybe rigidly attached to the substrate at a location notshown in this cross-section. Alternatively, as described above, theT-shaped electrode 232 may also be attached to the substrate 202 alongthe entire bottom surface so that the T-shaped electrode is notsuspended.

FIGS. 18-28 illustrate an alternative process to form a suspendedelectrode 354 and a second electrode 346. As with the previouslydescribed embodiments, this third embodiment begins with forming a firstsacrificial layer 304 on a top surface 318 of a substrate 302. The firstsacrificial layer 304 may be any of the previously described materialsthat can be removed later in the process.

In FIG. 18, a first electrode layer 306 forms overlying the firstsacrificial layer 304 and may be 20 microns or more in depth. The firstelectrode layer 306 corresponds to at least one surface of the suspendedelectrode 354. It may also correspond to at least one surface of thesecond electrode 346.

In one embodiment the first electrode layer 306 is formed of SiGe of aselected atomic percentage. Alternatively, the first electrode layer 306may consist of several layers of SiGe of differing atomic percentages.

A second sacrificial layer 308 forms overlying the first electrode layer306 and will act as a hard mask in forming some of the surfaces of theelectrodes. A photoresist layer 310 forms overlying the secondsacrificial layer 308 and is patterned to form the opening 312. A topsurface 314 of the second sacrificial layer 308 is exposed by theopening 312.

A width of the opening 312 determines a width of a recess 316 that formsas shown in FIG. 19. The recess 316 re-exposes the top surface 318 ofthe first sacrificial layer 304. The recess 316 has sidewalls 320, 321of exposed surfaces of the first electrode layer 306.

In FIG. 20, a third sacrificial layer 322 forms in the recess andoverlying the top surface 314 of the second sacrificial layer 308, thesidewalls 320, 321 of the first electrode layer 306, and the top surface318 of the first sacrificial layer 304. The third sacrificial layer 322is deposited rather than grown, as described above in FIGS. 1-10. Athickness of the third sacrificial layer 322 may be selected to form anopening 358 that is less than 100 nanometers. The opening 358, in FIG.28, separates the suspended electrode 354 from the second electrode 346.

In FIG. 21, a second electrode layer 324 forms overlying the thirdsacrificial layer 322 on the second sacrificial layer 308 and in therecess 316. The second electrode layer 324 may be the same or of adifferent atomic percentage of SiGe than the first electrode layer 306.Subsequently, the second electrode layer 324 is planarized by chemicalmechanical planarization so that at top surface 326 of the secondelectrode layer 324 is planar with a top surface 327 of the thirdsacrificial layer 322, see FIG. 22.

In FIG. 23, a second photoresist layer 328 is deposited and patterned.Portions of the second and third sacrificial layers 308 and 322 areetched based on the pattern of the second photoresist layer 328.Subsequently, the second photoresist layer 328 is removed.

In FIG. 24, the remaining portions 330, 334 of the second sacrificiallayer 308, which are covered by portions of the remaining thirdsacrificial layer 322, correspond to a width of the suspended electrode354 and to an anchor portion 350, see FIGS. 27 and 28. The portion ofthe third sacrificial layer 322 that is adjacent the sidewalls 320, 321of the first electrode layer 306 corresponds to the opening 358 and toanother opening 360. The etched of the portions of the secondsacrificial layer 308 and the third sacrificial layer 322 re-expose atop surface 336 of the first electrode layer 306 and the top surface 326of the second electrode layer 324.

In FIG. 25, a third electrode layer 338 is deposited overlying the topsurface 336 of the first electrode layer and the top surface 326 of thesecond electrode layer 324. The third electrode layer 338 may be of thesame or of a different atomic percentage than the first and secondelectrode layers 306, 324 based on desired qualities and performance ofthe electrodes.

In FIG. 26, a third photoresist layer 340 is deposited and patternedoverlying the third electrode layer 338. A position and size of thethird photoresist layer 340 may be selected to achieve a desired shapeof the second electrode 346. In this embodiment, one boundary of thethird photoresist layer 340 aligns with an interior surface of the thirdsacrificial layer 322 that formed adjacent the sidewalls 320, 321 of thefirst electrode layer 306. By aligning the third photoresist layer 340with the interior surface of the third sacrificial layer 322, no overhang will form when the sacrificial layers are later removed.

Another boundary of the third photoresist layer 340 extends overlyingthe first and third electrode layers 306, 338 that are stacked togetherand not separated by any other materials. This boundary corresponds toan exterior surface 348 of the second electrode 346 and may be varied toachieve a desired width of the second electrode 346.

Another portion of the patterned third photoresist layer 340 aligns withthe anchor portion 350 previously defined by the remainder of the secondand third sacrificial layers 334, 322, respectively.

As shown in FIG. 27, portions of the first and third electrode layers306 and 338 are removed by a suitable etch technique. An exteriorsurface 352 of the suspended electrode 354 is exposed when portions ofthe first electrode layer 306 are removed based on the width of theremaining portion 330 of the second sacrificial layer 308. An upperexterior surface 344 of the second electrode 346 is also exposed whenthe third electrode layer 338 is removed based on of the boundaries ofthe third photoresist layer 340. The removal of the portions of thefirst and third electrode layers 306, 338 re-expose the top surface 318of the first sacrificial layer 304.

Subsequently, as shown in FIG. 28, the suspended electrode 354 and thesecond electrode 346 are released by an etch suitable to remove portionsof the first, second, and third sacrificial layers 304, 330, and 322.The opening 358 separates the suspended electrode 354 from the secondelectrode 346. The surface 344 of the second electrode 346 issubstantially parallel to a surface 351 of the suspended electrode 354.The second electrode 346 may be a sensing body that registers a changein the capacitance between it and the suspended electrode 354. Theopening 360 between portions of the second electrode 346 corresponds tothe thickness of the third sacrificial layer 322.

Another opening 356 below the suspended electrode 354 and the secondelectrode 346 separates these electrodes from the substrate 302. Theelectrodes may be rigidly attached to the substrate 302 at separatelocations not visible in the cross-section. In addition, one of theelectrodes is electrically connected to the anchor portion 250. Theother electrode may then be electrically connected to a different anchorportion not shown in this cross-section.

Additionally or alternatively, the second electrode 346 may be rigidlyattached to the substrate 302 along an entire bottom surface of thesecond electrode, rather than being separated from the substrate 302 bythe opening 356. This may be achieved by a longer etch when forming therecess 316 in FIG. 19 so that the second electrode layer 324 may beformed on a top surface of the substrate 302.

After etching the portions of the first, second, and third sacrificiallayers 304, 330, and 322 a portion 342 of the first sacrificial layer304 remains under the anchor portion 350. Generally, the anchor portion350 is significantly larger than the suspended electrode 354. Thereforethe length of the etch to release the suspended electrode 354 is notlong enough to completely remove the oxide beneath the anchor portion350. The remaining portion 342 secures the anchor portion 350 to thesubstrate 302.

Various embodiments of 1, 2 and 3 suspended electrodes are disclosed. Ofcourse, each electrode may have multiple fingers, some of which areinterdigitated with each other. Alternatively, many separate electrodemembers, in the dozens or hundreds, can be formed, each having a desiredshape. While cross-sections have been shown, the top side geometry canbe any one of many accepted shapes, including spring members, weighedareas, vibrating portions and the like as are well known in the art.

The various embodiments described above can be combined to providefurther embodiments. All of the U.S. patents, U.S. patent applicationpublications, U.S. patent applications, foreign patents, foreign patentapplications and non-patent publications referred to in thisspecification and/or listed in the Application Data Sheet areincorporated herein by reference, in their entirety. Aspects of theembodiments can be modified, if necessary to employ concepts of thevarious patents, applications and publications to provide yet furtherembodiments.

These and other changes can be made to the embodiments in light of theabove-detailed description. In general, in the following claims, theterms used should not be construed to limit the claims to the specificembodiments disclosed in the specification and the claims, but should beconstrued to include all possible embodiments along with the full scopeof equivalents to which such claims are entitled. Accordingly, theclaims are not limited by the disclosure.

The invention claimed is:
 1. A micro electro-mechanical system,comprising: a substrate; a first suspended electrode having a firstsurface and a second surface, the first surface being transverse to thesecond surface; and a second suspended electrode including: a firstextension having a first surface facing the first surface of the firstsuspended electrode, the first extension being separated from thesubstrate by the first electrode; and a second extension transverse tothe first extension, the second extension having a second surface facingthe second surface of the first suspended electrode, the second surfaceof the second extension separated from the first electrode by a firstdistance.
 2. The system of claim 1 wherein the first and second surfacesof the first electrode form a first corner and the first and secondsurfaces of the second electrode form a second corner that correspondsto the first corner.
 3. The system of claim 1 wherein the first surfaceof the first electrode and the first surface of the first extension areseparated by a second distance that is greater than the first distance.4. The system of claim 1, further comprising: a third suspendedelectrode having a first surface and a second surface that is transverseto the first surface; the second electrode having: a third surface ofthe second extension that is opposite from the second surface of thesecond extension, the third surface of the second extension facing thesecond surface of the third electrode; and a third extension transverseto the second extension and extending in a direction opposite from thefirst extension, the third extension having a first surface facing thefirst surface of the third electrode.
 5. The system of claim 4 whereinthe third suspended electrode is separated from the first suspendedelectrode by the second extension of the second electrode.
 6. The systemof claim 1 wherein the first and second electrodes include silicongermanium.
 7. The system of claim 1 wherein the first distance is in therange of 10 and 100 nanometers.
 8. A device, comprising: a substrate; afirst electrode suspended over the substrate, the first electrode havinga top surface and a side surface; and a second electrode suspended overthe substrate, the second electrode having a first and a secondextension, the first extension being transverse to the second extensionand extending over the top surface of the first electrode and the secondextension being adjacent to the side surface of the first electrode, thefirst electrode being positioned between the first extension and thesubstrate.
 9. The device of claim 8 wherein the top and side surface ofthe first electrode form a first corner and the first and secondextensions of the second electrode form a second corner, the firstcorner configured to correspond with the second corner.
 10. The deviceof claim 8, further comprising: a third electrode suspended over thesubstrate, the third electrode separated from the first electrode by thesecond extension of the second electrode, the third electrode having atop and a side surface; and a third extension extending transverse tothe second extension of the third electrode and extending over the topsurface of the third electrode.
 11. The device of claim 10 wherein thefirst and third electrodes are separated from the second electrode by afirst distance and a second distance, respectively.
 12. The device ofclaim 11 wherein the first and second distance are in the range of 10and 100 nanometers.
 13. The device of claim 11 wherein the first andthird electrodes are separated from the first and third extensions ofthe second electrode by a third distance and a fourth distance,respectively.
 14. The device of claim 13 wherein the first and seconddistances are smaller than the third and fourth distances.
 15. Thedevice of claim 8 wherein the second extension of the second electrodeis separated from the side surface of the first electrode by a firstdistance.
 16. The device of claim 15 wherein the first distance is inthe range of 10 and 100 nanometers.
 17. The device of claim 15 whereinthe second extension of the second electrode extends from the firstextension towards the substrate and the second electrode includes athird extension extending from the first extension towards thesubstrate, the second and third extensions being separated by a seconddistance.
 18. The device of claim 17 wherein the first and the seconddistance are equal.